Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si

dc.creatorAra??jo, Carlos Moys??s
dc.creatorFernandez, J. R. L.
dc.creatorSilva, A. Ferreira da
dc.creatorPepe, Iuri Muniz
dc.creatorLeite, J. R.
dc.creatorSernelius, Bo E.
dc.creatorPersson, C.
dc.creatorAs, D. J.
dc.date.accessioned2019-05-22T15:25:30Z
dc.date.available2019-05-22T15:25:30Z
dc.date.issued2002-04
dc.identifier0026-2692
dc.identifierhttp://www.repositorio.ufba.br/ri/handle/ri/7533
dc.identifierv. 33, n. 4
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/2702506
dc.description.abstract
dc.languageen
dc.sourcehttp://dx.doi.org/10.1016/S0026-2692(01)00133-1
dc.subjectResistivity
dc.subjectMetal???nonmetal transition
dc.subjectBand-gap shift
dc.subjectPhotoluminescence
dc.titleElectrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si
dc.typeArtigo de Peri??dico


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