Artículos de revistas
A Synaptic Electrochemical Memristor Based on the Cu2+/Zn2+Cation Exchange in Zn:CdS Thin Films
Fecha
2018-09-14Registro en:
ChemistrySelect, v. 3, n. 34, p. 9794-9802, 2018.
2365-6549
10.1002/slct.201801152
2-s2.0-85053403970
Autor
Universidade Estadual Paulista (Unesp)
Universidade Federal de Santa Catarina (UFSC)
Institución
Resumen
Neuromorphic hardware systems that simulate functions of biological brain synapses have been widely investigated due to their possible application in brain-inspired computing. We hereby report on a novel electrochemical state machine based on Zn:CdS thin films. The memory switching mechanism involves the cation exchange of Cu2+ and Zn2+ acting as inorganic “neurotransmitters”. Similarly to the synapse-neurotransmitter interactions, Cu2+ ions increase the conductivity and the electrocatalytic activity of Zn:CdS towards the ferrocene/ferrocenium redox process. The cationic substitution of Zn2+ by Cu2+ in the film has shown significant changes in the electrochemical characteristic of the device. Such effects have been investigated with both alternated current (impedance) and direct current (voltammetry and I vs V) measurements. The cation exchange mechanism allows to write and store an electrochemical information into the device. Such information can be gradually erased by exchanging the absorbed Cu2+ ions with Zn2+. By means of a timed soaking, of the active area, with Cu2+ and Zn2+ diethyldithiocarbamates, the device can be driven through multiple conduction states, making it suitable for applications in artificial synapses research and memory storage systems.