dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorFederal Institute of São Paulo - IFSP
dc.contributorUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2018-12-11T17:33:18Z
dc.date.available2018-12-11T17:33:18Z
dc.date.created2018-12-11T17:33:18Z
dc.date.issued2017-06-27
dc.identifier2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72.
dc.identifierhttp://hdl.handle.net/11449/179050
dc.identifier10.1109/ICCDCS.2017.7959722
dc.identifier2-s2.0-85025821016
dc.identifier5589838844298232
dc.description.abstractThis paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.
dc.languageeng
dc.relation2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectCMOS
dc.subjecthigh sensitivity
dc.subjectlogarithmic pixel
dc.subjectphotodetector
dc.titleA logarithmic CMOS image sensor with wide output voltage swing range
dc.typeActas de congresos


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