dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2018-12-11T17:13:23Z | |
dc.date.available | 2018-12-11T17:13:23Z | |
dc.date.created | 2018-12-11T17:13:23Z | |
dc.date.issued | 2017-10-01 | |
dc.identifier | Journal of Materials Science: Materials in Electronics, v. 28, n. 20, p. 15685-15693, 2017. | |
dc.identifier | 1573-482X | |
dc.identifier | 0957-4522 | |
dc.identifier | http://hdl.handle.net/11449/174907 | |
dc.identifier | 10.1007/s10854-017-7458-5 | |
dc.identifier | 2-s2.0-85023753222 | |
dc.identifier | 2-s2.0-85023753222.pdf | |
dc.identifier | 1922357184842767 | |
dc.identifier | 0000-0003-1300-4978 | |
dc.description.abstract | Calcium copper titanate (CaCu3Ti4O12, CCTO), thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ± 0.001 Å free of secondary phases. Dielectric spectroscopy was employed to examine the polycrystalline behaviour of CCTO material and the mechanisms responsible for the barrier-layer capacitances associated with Schottky-type barriers and the non-Ohmic properties. The film presents an electric breakdown field (Eb = 203 V cm−1) and then nonlinear coefficient (α = 6), which is even lower than that of the ZnO and SnO2 based varistors The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO4], [CuO11], [CuO11Vo x] and [TiO5·VO∙] clusters. | |
dc.language | eng | |
dc.relation | Journal of Materials Science: Materials in Electronics | |
dc.relation | 0,503 | |
dc.rights | Acesso aberto | |
dc.source | Scopus | |
dc.title | Non-ohmic properties of CaCu3Ti4O12 thin films deposited By RF-sputtering | |
dc.type | Otros | |