Imprint effect in PZT thin films at compositions around the morphotropic phase boundary

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade Federal do Tocantins
dc.contributorUniversity of Aveiro
dc.contributorUral Federal University
dc.date.accessioned2018-12-11T17:03:37Z
dc.date.available2018-12-11T17:03:37Z
dc.date.created2018-12-11T17:03:37Z
dc.date.issued2016-08-31
dc.identifierFerroelectrics, v. 498, n. 1, p. 18-26, 2016.
dc.identifier1563-5112
dc.identifier0015-0193
dc.identifierhttp://hdl.handle.net/11449/173097
dc.identifier10.1080/00150193.2016.1166421
dc.identifier2-s2.0-84975143327
dc.identifier2-s2.0-84975143327.pdf
dc.description.abstractPiezoeresponse force microscopy (PFM) and local piezoresponse hysteresis loops were used to study the imprint effect in PbZr1-xTixO3 thin films at compositions around the morphotropic phase boundary (MPB). Schottky barriers and mechanical coupling between film-substrate were excluded as origin for the imprint in these films. Comparing the composition dependence of the effective d33 before poling with some reports in the literature, the existence of point defects such as complex vacancies (Vpb .., VO .. and Vpb ..-VO ..) and Ti3+ centers is discussed as probable origin for the imprint effect observed here.
dc.languageeng
dc.relationFerroelectrics
dc.relation0,260
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectImprint
dc.subjectPZT
dc.subjectthin films
dc.titleImprint effect in PZT thin films at compositions around the morphotropic phase boundary
dc.typeArtículos de revistas


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