Low temperature performance of proton irradiated strained SOI FinFET

dc.contributorUniversidade de São Paulo (USP)
dc.contributorImec
dc.contributorKU Leuven
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-12-11T16:48:37Z
dc.date.available2018-12-11T16:48:37Z
dc.date.created2018-12-11T16:48:37Z
dc.date.issued2017-06-29
dc.identifierJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, p. 61-63.
dc.identifierhttp://hdl.handle.net/11449/169992
dc.identifier10.1109/ULIS.2017.7962601
dc.identifier2-s2.0-85026745288
dc.identifier0496909595465696
dc.identifier0000-0002-0886-7798
dc.description.abstractThis paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (VTH), subthreshold swing (SS), the Early voltage VEA and the intrinsic gain voltage (AV). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view.
dc.languageeng
dc.relationJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectFinFET
dc.subjectlow temperature
dc.subjectproton radiation
dc.subjectstrained devices
dc.titleLow temperature performance of proton irradiated strained SOI FinFET
dc.typeActas de congresos


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