dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2018-11-26T15:47:35Z
dc.date.available2018-11-26T15:47:35Z
dc.date.created2018-11-26T15:47:35Z
dc.date.issued2017-01-01
dc.identifier2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
dc.identifierhttp://hdl.handle.net/11449/160129
dc.identifierWOS:000426524500005
dc.identifier0496909595465696
dc.identifier0000-0002-0886-7798
dc.description.abstractThis paper reports a simple method for detection of the self-heating effect through a special signature, without the need of specific structures or high frequency systems, even in devices presenting positive output conductances. In order to develop this method, simple numerical models were employed, and later verified through experimental observation with pFinFET devices.
dc.languageeng
dc.publisherIeee
dc.relation2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands
dc.rightsAcesso aberto
dc.sourceWeb of Science
dc.subjectSelf-heating effect
dc.subjectFinFET
dc.subjectSemiconductor-On-Insulator
dc.titleSimple method for detection of the self-heating signature
dc.typeActas de congresos


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