Actas de congresos
Proton radiation effects on the self-aligned triple gate SOI p-type Tunnel FET output characteristic
Fecha
2017-01-01Registro en:
2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
WOS:000426524500004
0496909595465696
0000-0002-0886-7798
Autor
Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
IMEC
Katholieke Univ Leuven
Institución
Resumen
This paper reports for the first time the study of radiation effects on triple gate SOI tunnel FETs. In this work, devices with 1 mu m width and three different channel lengths were exposed to a 600 keV proton radiation source and their current-voltage behavior was analyzed after 1 Mrad(Si) of accumulated total dose, comparing the results obtained before and after irradiation. It was possible to notice a drain current decrease in the shorter channel devices. However, this total dose influence was not so prominent in the longer channel ones. The reasons for both phenomena is discussed based on the competition between the drain current split and the high channel resistance.