dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2016-03-02T13:03:32Z
dc.date.available2016-03-02T13:03:32Z
dc.date.created2016-03-02T13:03:32Z
dc.date.issued2014
dc.identifierAdvanced Materials Research, v. 975, p. 248-253, 2014.
dc.identifier1662-8985
dc.identifierhttp://hdl.handle.net/11449/135610
dc.identifier10.4028/www.scientific.net/AMR.975.248
dc.identifier7730719476451232
dc.identifier0000-0001-5762-6424
dc.description.abstractAlumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.
dc.languageeng
dc.relationAdvanced Materials Research
dc.relation0,121
dc.rightsAcesso restrito
dc.sourceCurrículo Lattes
dc.subjectAlumina
dc.subjectOxidation
dc.subjectResistive evaporation
dc.subjectThermal annealing
dc.titleAl2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor
dc.typeArtículos de revistas


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