dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2016-03-02T13:00:22Z | |
dc.date.available | 2016-03-02T13:00:22Z | |
dc.date.created | 2016-03-02T13:00:22Z | |
dc.date.issued | 2013 | |
dc.identifier | Materials Sciences and Applications, v. 04, n. 12, p. 802-807, 2013. | |
dc.identifier | 2153-1188 | |
dc.identifier | http://hdl.handle.net/11449/135253 | |
dc.identifier | 10.4236/msa.2013.412102 | |
dc.identifier | 0104980613925349 | |
dc.identifier | 1353862414532005 | |
dc.identifier | 7157327220048138 | |
dc.identifier | 0000-0002-4511-3768 | |
dc.identifier | 0000-0002-7734-4069 | |
dc.description.abstract | Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm-3 to 2.6 × 1019 cm-3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO. | |
dc.language | eng | |
dc.relation | Materials Sciences and Applications | |
dc.rights | Acesso restrito | |
dc.source | Currículo Lattes | |
dc.subject | ZnO Thin Films | |
dc.subject | Surface Morphology | |
dc.subject | Optical Properties | |
dc.subject | OES | |
dc.title | Effect of Zn Sputtering Rate on the Morphological and Optical Properties of ZnO Films | |
dc.type | Artículos de revistas | |