Artículos de revistas
Al-doping effect on the surface morphology of zno films grown by reactive rf magnetron sputtering
Fecha
2013Registro en:
Materials Sciences and Applications, v. 04, n. 12, p. 761-767, 2013.
2153-1188
10.4236/msa.2013.412096
0104980613925349
1353862414532005
0000-0002-4511-3768
0000-0002-7734-4069
Autor
Universidade Estadual Paulista (Unesp)
Institución
Resumen
Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm−3 to 2.6 × 1019 cm−3 . The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.