Electrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films

dc.contributorInstituto Tecnológico de Aeronáutica (ITA)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-20T15:32:14Z
dc.date.available2014-05-20T15:32:14Z
dc.date.created2014-05-20T15:32:14Z
dc.date.issued2009-01-01
dc.identifierMaterials Science Forum, v. 615 617, p. 327-330.
dc.identifier0255-5476
dc.identifierhttp://hdl.handle.net/11449/130388
dc.identifier10.4028/www.scientific.net/MSF.615-617.327
dc.identifierWOS:000265961100078
dc.identifier2-s2.0-79251649240
dc.identifier7157327220048138
dc.description.abstractAmorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.
dc.languageeng
dc.publisherTrans Tech Publications Ltd
dc.relationMaterials Science Forum
dc.relation0,180
dc.rightsAcesso aberto
dc.sourceScopus
dc.subjectSilicon carbon nitride
dc.subjectThermal annealing
dc.subjectResistivity
dc.subjectElastic modulus
dc.subjectHardness
dc.titleElectrical and Mechanical Properties of Post-annealed SiC(x)N(y) Films
dc.typeActas de congresos


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