Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade de São Paulo (USP)
dc.contributorIMEC
dc.contributorKatholieke Univ Leuven
dc.date.accessioned2015-03-18T15:53:41Z
dc.date.available2015-03-18T15:53:41Z
dc.date.created2015-03-18T15:53:41Z
dc.date.issued2014-11-01
dc.identifierMicroelectronics Reliability. Oxford: Pergamon-elsevier Science Ltd, v. 54, n. 11, p. 2349-2354, 2014.
dc.identifier0026-2714
dc.identifierhttp://hdl.handle.net/11449/116667
dc.identifier10.1016/j.microrel.2014.06.013
dc.identifierWOS:000346212900001
dc.description.abstractIn this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced Barrier Lowering (DIBL) and the important figures of merit for the analog performance such as transconductance-over-drain current, output conductance and intrinsic voltage gain will be compared. Furthermore, the Low-Frequency (LF) noise will be also analyzed in the DT mode and the standard biasing configuration. The results indicate that the better electrical characteristics and analog performance of DTMOS FinFETs make them very competitive candidates for low-noise RF analog applications in a radiation environment. (C) 2014 Elsevier Ltd. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationMicroelectronics Reliability
dc.relation1.236
dc.relation0,388
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectDTMOS FinFETs
dc.subjectProton irradiation
dc.subjectAnalog performance
dc.subjectLow-frequency noise
dc.subjectFlicker noise
dc.subjectGeneration-recombination noise
dc.titleInvestigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución