Thermoelectric effects in quantum dots

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-27T11:24:00Z
dc.date.available2014-05-27T11:24:00Z
dc.date.created2014-05-27T11:24:00Z
dc.date.issued2009-10-15
dc.identifierPhysica B: Condensed Matter, v. 404, n. 19, p. 3312-3315, 2009.
dc.identifier0921-4526
dc.identifierhttp://hdl.handle.net/11449/71196
dc.identifier10.1016/j.physb.2009.07.118
dc.identifier2-s2.0-70349120320
dc.identifier0097996544293892
dc.description.abstractWe report a numerical renormalization-group study of the thermoelectric effect in the single-electron transistor (SET) and side-coupled geometries. As expected, the computed thermal conductance and thermopower curves show signatures of the Kondo effect and of Fano interference. The thermopower curves are also affected by particle-hole asymmetry. © 2009 Elsevier B.V. All rights reserved.
dc.languageeng
dc.relationPhysica B: Condensed Matter
dc.relation1.453
dc.relation0,417
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectFano interference
dc.subjectKondo effect
dc.subjectNumerical renormalization-group
dc.subjectThermopower
dc.subjectParticle-hole asymmetry
dc.subjectQuantum Dot
dc.subjectRenormalization group
dc.subjectSingle electron transistors
dc.subjectThermal conductance
dc.subjectThermoelectric effects
dc.subjectThermopowers
dc.subjectElectric resistance
dc.subjectMagnetic materials
dc.subjectSemiconductor quantum dots
dc.subjectThermoelectric power
dc.titleThermoelectric effects in quantum dots
dc.typeArtículos de revistas


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