Effect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidad del Valle
dc.contributorUniversidad de Antioquia
dc.contributorUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-27T11:22:48Z
dc.date.available2014-05-27T11:22:48Z
dc.date.created2014-05-27T11:22:48Z
dc.date.issued2008-03-01
dc.identifierPhysica E: Low-Dimensional Systems and Nanostructures, v. 40, n. 5, p. 1464-1466, 2008.
dc.identifier1386-9477
dc.identifierhttp://hdl.handle.net/11449/70315
dc.identifier10.1016/j.physe.2007.09.145
dc.identifier2-s2.0-39649096531
dc.description.abstractWe use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined effects of non-parabolicity, anisotropy and spin-splitting terms are taken into account. Theoretical results are given as functions of the QW width and compared with available experimental data and previous theoretical works. © 2007 Elsevier B.V. All rights reserved.
dc.languageeng
dc.relationPhysica E: Low-Dimensional Systems and Nanostructures
dc.relation2.399
dc.relation0,595
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectDresselhaus
dc.subjectQuantum well
dc.subjectRashba
dc.subjectSpin-splitting
dc.subjectAnisotropy
dc.subjectElectrons
dc.subjectMagnetic fields
dc.subjectDresselhaus spin-splitting
dc.subjectElectron g factor
dc.subjectSemiconductor quantum wells
dc.titleEffect of the Rashba and Dresselhaus spin-splitting terms on the electron g factor in semiconductor quantum wells under applied magnetic fields
dc.typeArtículos de revistas


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