Crystallization of amorphous GaAs films prepared onto different substrates

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade Estadual de Campinas (UNICAMP)
dc.date.accessioned2014-05-27T11:20:27Z
dc.date.available2014-05-27T11:20:27Z
dc.date.created2014-05-27T11:20:27Z
dc.date.issued2002-04-01
dc.identifierJournal of Non-Crystalline Solids, v. 299-302, n. PART 2, p. 788-792, 2002.
dc.identifier0022-3093
dc.identifierhttp://hdl.handle.net/11449/66857
dc.identifier10.1016/S0022-3093(01)00983-8
dc.identifier2-s2.0-0036530857
dc.identifier1134426200935790
dc.description.abstractThis work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and the X-ray diffraction (XRD) techniques. Films of about 1 μm were grown on c-Si and glass substrates. The crystallization process is less effective for samples deposited on c-Si. This could be due to the ordering in the first layers of the film imposed by the oriented Si substrates. We propose that this ordering makes the growth of crystallites in these films more restrained than the growth occurring in the completely amorphous films on glass substrates. © 2002 Elsevier Science B.V. All rights reserved.
dc.languageeng
dc.relationJournal of Non-Crystalline Solids
dc.relation2.488
dc.relation0,722
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectAnnealing
dc.subjectCrystalline materials
dc.subjectCrystallization
dc.subjectFilm growth
dc.subjectGlass
dc.subjectRaman scattering
dc.subjectSemiconducting gallium arsenide
dc.subjectSubstrates
dc.subjectX ray diffraction analysis
dc.subjectThermal annealing
dc.subjectAmorphous films
dc.titleCrystallization of amorphous GaAs films prepared onto different substrates
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución