Electrical properties of the SnO2-based varistor

dc.contributorUniversidade Estadual de Ponta Grossa (UEPG)
dc.contributorUniversidade Federal de São Carlos (UFSCar)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-27T11:19:38Z
dc.date.available2014-05-27T11:19:38Z
dc.date.created2014-05-27T11:19:38Z
dc.date.issued1998-12-01
dc.identifierJournal of Materials Science: Materials in Electronics, v. 9, n. 2, p. 159-165, 1998.
dc.identifier0957-4522
dc.identifierhttp://hdl.handle.net/11449/65576
dc.identifier10.1023/A:1008821808693
dc.identifierWOS:000072708700012
dc.identifier2-s2.0-0032045617
dc.identifier0477045906733254
dc.identifier0000-0003-2827-0208
dc.description.abstractThe non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.
dc.languageeng
dc.relationJournal of Materials Science: Materials in Electronics
dc.relation2.324
dc.relation0,503
dc.rightsAcesso restrito
dc.sourceScopus
dc.subjectCeramic materials
dc.subjectCrystal defects
dc.subjectCrystal microstructure
dc.subjectElectric conductivity
dc.subjectElectric field effects
dc.subjectElectric properties
dc.subjectElectron tunneling
dc.subjectGrain boundaries
dc.subjectMathematical models
dc.subjectScanning electron microscopy
dc.subjectSemiconducting tin compounds
dc.subjectX ray diffraction analysis
dc.subjectCobalt compounds
dc.subjectDoping (additives)
dc.subjectNiobium compounds
dc.subjectPhase composition
dc.subjectThermionic emission
dc.subjectTin compounds
dc.subjectAtomic defect model
dc.subjectNonlinear electrical properties
dc.subjectSchottky double barrier formation
dc.subjectVoltage barrier
dc.subjectDouble barrier formation
dc.subjectElectric conduction mechanism
dc.subjectTin dioxide
dc.subjectVaristors
dc.titleElectrical properties of the SnO2-based varistor
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución