dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.contributor | Universidade Estadual de Campinas (UNICAMP) | |
dc.contributor | Universidade Federal de Juiz de Fora (UFJF) | |
dc.date.accessioned | 2014-05-27T11:18:01Z | |
dc.date.available | 2014-05-27T11:18:01Z | |
dc.date.created | 2014-05-27T11:18:01Z | |
dc.date.issued | 1995-12-01 | |
dc.identifier | Thin Solid Films, v. 270, n. 1-2, p. 109-113, 1995. | |
dc.identifier | 0040-6090 | |
dc.identifier | http://hdl.handle.net/11449/64652 | |
dc.identifier | 10.1016/0040-6090(95)06938-0 | |
dc.identifier | WOS:A1995TM18700022 | |
dc.identifier | 2-s2.0-0029533793 | |
dc.identifier | 0000-0002-4511-3768 | |
dc.description.abstract | Thin films were deposited from hexamethyldisiloxane (HMDSO) in a glow discharge supplied with radiofrequency (rf) power. Actino-metric optical emission spectroscopy was used to follow trends in the plasma concentrations of the species SiH (414.2 nm), CH (431.4 nm), CO (520.0 nm), and H (656.3 nm) as a function of the applied rf power (range 5 to 35 W). Transmission infrared spectroscopy (IRS) was employed to characterize the molecular structure of the polymer, showing the presence of Si-H, Si-O-Si, Si-O-C and C-H groups. The deposition rate, determined by optical interferometry, ranged from 60 to 130 nm/min. Optical properties were determined from transmission ultra violet-visible spectroscopy (UVS) data. The absorption coefficient α, the refractive index n, and the optical gap E04 of the polymer films were calculated as a function of the applied power. The refractive index at a photon energy of 1 eV varied from 1.45 to 1.55, depending on the rf power used for the deposition. The absorption coefficient showed an absorption edge similar to other non-crystalline materials, amorphous hydrogenated carbon, and semiconductors. For our samples, we define as an optical gap, the photon energy E04 corresponding to the energy at an absorption of 104 cm-1. The values of E04 decreased from 5.3 to 4.6 as the rf power was increased from 5 to 35 W. © 1995. | |
dc.language | eng | |
dc.relation | Thin Solid Films | |
dc.relation | 1.939 | |
dc.relation | 0,617 | |
dc.rights | Acesso restrito | |
dc.source | Scopus | |
dc.subject | Optical properties | |
dc.subject | Plasma processing and deposition | |
dc.subject | Amorphous materials | |
dc.subject | Carbon | |
dc.subject | Glow discharges | |
dc.subject | Hydrogenation | |
dc.subject | Infrared spectroscopy | |
dc.subject | Interferometry | |
dc.subject | Molecular structure | |
dc.subject | Polymerization | |
dc.subject | Refractive index | |
dc.subject | Semiconducting silicon compounds | |
dc.subject | Semiconductor plasmas | |
dc.subject | Actinometric optical emission spectroscopy | |
dc.subject | Hexamethyldisoloxane | |
dc.subject | Optical emission measurements | |
dc.subject | Optical gap | |
dc.subject | Optical interferometry | |
dc.subject | Photon energy | |
dc.subject | Plasma concentrations | |
dc.subject | Plasma processing | |
dc.subject | Ultraviolet visible spectroscopy | |
dc.subject | Thin films | |
dc.title | HMDSO plasma polymerization and thin film optical properties | |
dc.type | Artículos de revistas | |