Artículos de revistas
Dielectric properties of soft chemical method derived CaCu3Ti4O12 thin films onto Pt/TiO2/Si(100) substrates
Fecha
2011-03-03Registro en:
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 509, n. 9, p. 3817-3821, 2011.
0925-8388
10.1016/j.jallcom.2010.12.184
WOS:000287968000021
WOS000287968000021.pdf
3573363486614904
Autor
Universidade Estadual Paulista (Unesp)
Universidade Federal de Itajubá (UNIFEI)
Institución
Resumen
Calcium copper titanate, CaCu3Ti4O12 (CCTO), thin film has been deposited by the soft chemical method on Pt/Ti/SiO2/Si (1 0 0) substrates at 700 degrees C for 2 h. The peaks were indexed as cubic phase belonging to the Im-3 space group. The film exhibited a duplex microstructure consisting of large grains of 130 nm in length and regions of fine grains (less than 80 nm). The CCTO film capacitor showed a dielectric loss of 0.031 and a dielectric permittivity of 1020 at 1 MHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. Based on impedance analyses, the equivalent circuit of CCTO film consisting of a resistor connected in series with two resistor-capacitor (RC) elements. (C) 2011 Elsevier B.V. All rights reserved.