Actas de congresos
Ga-Modified Nanostructured ZnO: Characterization and Application in Dye-Sensitized Solar Cells
Fecha
2008-01-01Registro en:
Advanced Powder Technology Vi. Stafa-zurich: Trans Tech Publications Ltd, v. 591-593, p. 13-17, 2008.
0255-5476
10.4028/www.scientific.net/MSF.591-593.13
WOS:000262481100003
4284809342546287
Autor
Universidade Estadual Paulista (Unesp)
Institución
Resumen
ZnO has received great attention in many applications due to its electronic and optical properties. We report on the preparation of ZnO and gallium-containing ZnO (ZnO:Ga) nanoparticles by the precipitation method. The nanoparticles have the wurtzite structure and a high crystallinity. Gallium ions are present as Ga(3+), as evidenced by the binding energies through XPS. Porosity and surface area of the powder increased under increasing gallium level, explained by the smaller particle size of ZnO:Ga samples compared with ZnO. The estimated optical band gap of ZnO was 3.2 eV, comparable to ZnO:Ga.