Phase separation suppression in InGaN epitaxial layers due to biaxial strain

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniv Gesamthsch Paderborn
dc.contributorUniv Jena
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:41Z
dc.date.available2014-05-20T15:30:41Z
dc.date.created2014-05-20T15:30:41Z
dc.date.issued2002-02-04
dc.identifierApplied Physics Letters. Melville: Amer Inst Physics, v. 80, n. 5, p. 769-771, 2002.
dc.identifier0003-6951
dc.identifierhttp://hdl.handle.net/11449/40011
dc.identifier10.1063/1.1436270
dc.identifierWOS:000173617700022
dc.identifierWOS000173617700022.pdf
dc.description.abstractPhase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1-xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. (C) 2002 American Institute of Physics.
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationApplied Physics Letters
dc.relation3.495
dc.relation1,382
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titlePhase separation suppression in InGaN epitaxial layers due to biaxial strain
dc.typeArtículos de revistas


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