dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Federal de Goiás (UFG)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:30:30Z
dc.date.available2014-05-20T15:30:30Z
dc.date.created2014-05-20T15:30:30Z
dc.date.issued2011-12-01
dc.identifierPhysica B-condensed Matter. Amsterdam: Elsevier B.V., v. 406, n. 23, p. 4381-4386, 2011.
dc.identifier0921-4526
dc.identifierhttp://hdl.handle.net/11449/39856
dc.identifier10.1016/j.physb.2011.08.091
dc.identifierWOS:000296872800009
dc.identifier2998503841917815
dc.identifier6446047463034654
dc.identifier0000-0003-3286-9440
dc.description.abstractOxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS2+Ga2O3 (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics. (C) 2011 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationPhysica B: Condensed Matter
dc.relation1.453
dc.relation0,417
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectOxysulfide
dc.subjectOptical bandgap
dc.subjectPhotoexpansion
dc.subjectPhotobleaching
dc.subjectThin films
dc.titlePhotoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system
dc.typeArtículos de revistas


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