dc.contributor | Universidade Estadual Paulista (Unesp) | |
dc.date.accessioned | 2014-05-20T15:30:15Z | |
dc.date.available | 2014-05-20T15:30:15Z | |
dc.date.created | 2014-05-20T15:30:15Z | |
dc.date.issued | 2006-05-01 | |
dc.identifier | Journal of Solid State Chemistry. San Diego: Academic Press Inc. Elsevier B.V., v. 179, n. 5, p. 1330-1334, 2006. | |
dc.identifier | 0022-4596 | |
dc.identifier | http://hdl.handle.net/11449/39686 | |
dc.identifier | 10.1016/j.jssc.2006.01.046 | |
dc.identifier | WOS:000237528900007 | |
dc.identifier | 4284809342546287 | |
dc.description.abstract | Gallium-doped zinc oxide (ZnO:Ga 1, 2 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa2O4) With the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa2O4 in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga3+ at regular octahedral symmetry and its surrounding O2- ions. The amount of ZnGa2O4 increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method. (C) 2006 Elsevier B.V. All rights reserved. | |
dc.language | eng | |
dc.publisher | Elsevier B.V. | |
dc.relation | Journal of Solid State Chemistry | |
dc.relation | 2.179 | |
dc.relation | 0,632 | |
dc.rights | Acesso restrito | |
dc.source | Web of Science | |
dc.subject | zinc gallate | |
dc.subject | impurities in semiconductors | |
dc.subject | crystal structure and symmetry | |
dc.subject | optical properties | |
dc.subject | doping | |
dc.subject | ZnO : Ga | |
dc.subject | ZnGa3O4 | |
dc.subject | Pechini method | |
dc.title | The effects of ZnGa2O4 formation on structural and optical properties of ZnO : Ga powders | |
dc.type | Artículos de revistas | |