Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

dc.contributorUniversidade Estadual de Londrina (UEL)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorCNRS
dc.date.accessioned2014-05-20T15:29:37Z
dc.date.available2014-05-20T15:29:37Z
dc.date.created2014-05-20T15:29:37Z
dc.date.issued2003-04-15
dc.identifierJournal of Applied Physics. Melville: Amer Inst Physics, v. 93, n. 8, p. 4475-4479, 2003.
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11449/39158
dc.identifier10.1063/1.1560574
dc.identifierWOS:000181863100015
dc.identifierWOS000181863100015.pdf
dc.identifier6977466698742311
dc.description.abstractGaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity. (C) 2003 American Institute of Physics.
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationJournal of Applied Physics
dc.relation2.176
dc.relation0,739
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleEffect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy
dc.typeArtículos de revistas


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