Effect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors

dc.contributorUniversidade Federal de São Carlos (UFSCar)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T15:25:34Z
dc.date.available2014-05-20T15:25:34Z
dc.date.created2014-05-20T15:25:34Z
dc.date.issued2003-05-26
dc.identifierMaterials Chemistry and Physics. Lausanne: Elsevier B.V. Sa, v. 80, n. 2, p. 512-516, 2003.
dc.identifier0254-0584
dc.identifierhttp://hdl.handle.net/11449/35952
dc.identifier10.1016/S0254-0584(03)00083-X
dc.identifierWOS:000182508000021
dc.identifier0477045906733254
dc.identifier0000-0003-2827-0208
dc.description.abstractZnO has the characteristic of presenting an intermediate value for the effective 3 eV barrier at room temperature. ZnO ceramics are applied in high-voltage systems or circuits. Attempts were made to reduce the number of effective barriers in the system by adding large particles of ZnO to the varistor composition. This procedure reduced the breakdown field of the varistors by values up to 90% lower than those initially obtained, and produced nonlinear coefficients as low as 20. (C) 2003 Elsevier B.V. B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationMaterials Chemistry and Physics
dc.relation2.210
dc.relation0,615
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectohmic properties
dc.subjectvaristor
dc.subjectzinc oxide
dc.subjectZnO seeds
dc.titleEffect of the addition of ZnO seeds on the electrical proprieties of ZnO-based varistors
dc.typeArtículos de revistas


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