Ferroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade Federal de São Carlos (UFSCar)
dc.date.accessioned2014-05-20T15:24:23Z
dc.date.available2014-05-20T15:24:23Z
dc.date.created2014-05-20T15:24:23Z
dc.date.issued2004-07-01
dc.identifierJournal of Electroceramics. Dordrecht: Kluwer Academic Publ, v. 13, n. 1-3, p. 65-70, 2004.
dc.identifier1385-3449
dc.identifierhttp://hdl.handle.net/11449/34998
dc.identifier10.1007/s10832-004-5077-z
dc.identifierWOS:000226236100010
dc.identifier3892896473273324
dc.identifier0000-0001-7083-5626
dc.description.abstractLanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning electron microscopy (SEM) showed rounded grains, which is not typical for these system. The BLT films showed well-saturated polarization-electric field curve which 2P(r) = 41.4 muC/cm(2) and V-c = 0.99 V. The capacitance dependence on the voltage is strongly nonlinear, confirming the ferroelectric properties of the film resulting from the domains switching. These properties make BLT a promising material for FERAM applications.
dc.languageeng
dc.publisherKluwer Academic Publ
dc.relationJournal of Electroceramics
dc.relation1.238
dc.relation0,427
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectbismuth lanthanum titanate
dc.subjectFERAM
dc.subjectthin film
dc.titleFerroelectric and dielectric properties of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
dc.typeArtículos de revistas


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