dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorMIT
dc.date.accessioned2014-05-20T14:18:49Z
dc.date.available2014-05-20T14:18:49Z
dc.date.created2014-05-20T14:18:49Z
dc.date.issued2012-09-01
dc.identifierJournal of Applied Physics. Melville: Amer Inst Physics, v. 112, n. 5, p. 7, 2012.
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11449/25677
dc.identifier10.1063/1.4751344
dc.identifierWOS:000309072200153
dc.identifierWOS000309072200153.pdf
dc.identifier2305581567093057
dc.description.abstractIn this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751344]
dc.languageeng
dc.publisherAmerican Institute of Physics (AIP)
dc.relationJournal of Applied Physics
dc.relation2.176
dc.relation0,739
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.titleMulti-functional properties of CaCu3Ti4O12 thin films
dc.typeArtículos de revistas


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