Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

dc.contributorUniversidade Federal de Itajubá (UNIFEI)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T14:18:35Z
dc.date.available2014-05-20T14:18:35Z
dc.date.created2014-05-20T14:18:35Z
dc.date.issued2010-03-18
dc.identifierJournal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 493, n. 1-2, p. 158-162, 2010.
dc.identifier0925-8388
dc.identifierhttp://hdl.handle.net/11449/25604
dc.identifier10.1016/j.jallcom.2009.12.113
dc.identifierWOS:000276054200041
dc.description.abstractThis paper focuses on the piezoresponse characteristics at room temperature in niobium modified bismuth ferrite thin films (BFN) deposited on Pt/TiO(2)/SiO(2)/Si (1 0 0) substrates by the soft chemical method. The obtained films were grown at a temperature of 500 degrees C. The Nb dopant is effective in improving electrical properties of BFO films. XPS results show a single-phase Nb-doped BFO thin films with a Fe(3+) valence state. It was found that Nb-doped BFO thin films exhibited good electrical properties, such as improved capacitance-voltage and high piezoeletric coefficient, indicating a promising material for use in future memories based on magnetic ferroelectrics. (C) 2009 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V. Sa
dc.relationJournal of Alloys and Compounds
dc.relation3.779
dc.relation1,020
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectFerroelectrics
dc.subjectThin films
dc.subjectChemical synthesis
dc.subjectPiezoelectricity
dc.titlePiezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method
dc.typeArtículos de revistas


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