Effects of annealing on the crystallization and roughness of PLZT thin films

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversity of Belgrade
dc.date.accessioned2014-05-20T14:17:56Z
dc.date.available2014-05-20T14:17:56Z
dc.date.created2014-05-20T14:17:56Z
dc.date.issued2001-03-01
dc.identifierThin Solid Films. Lausanne: Elsevier B.V. Sa, v. 384, n. 1, p. 132-137, 2001.
dc.identifier0040-6090
dc.identifierhttp://hdl.handle.net/11449/25375
dc.identifier10.1016/S0040-6090(00)01782-X
dc.identifierWOS:000167437500019
dc.description.abstractLead lanthanum zirconate titanate (PLZT) thin films with stoichiometry (9/65/35) were prepared by a dip-coating process using a polymeric organic solution. The solution viscosity was adjusted in the range of 15-56 cP. Silicon (100) substrates were previously cleaned and then immersed in the solution. The withdrawal speed of substrate from the solution was adjusted within a range of 5 to 20 mm/min. The coated substrates were thermally treated in the 450-700 degreesC temperature range. Surface roughness and crystallization of these films are strongly dependent on the annealing conditions. Infrared and X-ray diffraction data for PLZT powders heat-treated at 650 degreesC for 3 h show that the material is free of carbonate phases and crystalline. (C) 2001 Elsevier B.V. B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationThin Solid Films
dc.relation1.939
dc.relation0,617
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectannealing
dc.subjectcrystallization
dc.subjectsurface roughness
dc.subjectx-ray diffraction
dc.titleEffects of annealing on the crystallization and roughness of PLZT thin films
dc.typeArtículos de revistas


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