Radiative association of C and P, and Si and P atoms

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-02-26T17:27:08Z
dc.date.accessioned2014-05-20T14:16:07Z
dc.date.available2014-02-26T17:27:08Z
dc.date.available2014-05-20T14:16:07Z
dc.date.created2014-02-26T17:27:08Z
dc.date.created2014-05-20T14:16:07Z
dc.date.issued2006-11-11
dc.identifierMonthly Notices of the Royal Astronomical Society. Malden: Wiley-blackwell, v. 372, n. 4, p. 1653-1656, 2006.
dc.identifier0035-8711
dc.identifierhttp://hdl.handle.net/11449/24847
dc.identifier10.1111/j.1365-2966.2006.10964.x
dc.identifierWOS:000241626100017
dc.identifier6915586041935129
dc.identifier4276078473559775
dc.description.abstractThe rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 x 10(-18) to 1.62 x 10(-18) cm(3) s(-1) and from 3.73 x 10(-20) to 7.03 x 10(-20) cm(3) s(-1) for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature.
dc.languageeng
dc.publisherWiley-Blackwell
dc.relationMonthly Notices of the Royal Astronomical Society
dc.relation5.194
dc.relation2,346
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectatomic data
dc.subjectatomic processes
dc.subjectcircumstellar matter
dc.subjectISM : molecules
dc.titleRadiative association of C and P, and Si and P atoms
dc.typeArtículos de revistas


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