Ferroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodes

dc.contributorUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2014-05-20T13:28:13Z
dc.date.available2014-05-20T13:28:13Z
dc.date.created2014-05-20T13:28:13Z
dc.date.issued2008-01-21
dc.identifierJournal of Materials Processing Technology. Lausanne: Elsevier B.V. Sa, v. 196, n. 1-3, p. 10-14, 2008.
dc.identifier0924-0136
dc.identifierhttp://hdl.handle.net/11449/9368
dc.identifier10.1016/j.jmatprotec.2007.06.039
dc.identifierWOS:000252623200002
dc.identifier3573363486614904
dc.description.abstractThe effect of film orientation on piezoelectric and ferroelectric properties of bismuth layered compounds deposited on platinum coated silicon substrates was investigated. Piezo-force microscopy was used to probe the local piezoelectric properties of Bi(4)Ti(3)O(12), CaBi(4)Ti(4)O(15) and SrBi(4)Ti(4)O(15) films. Our measurements on individual grains clearly reveal that the local piezoelectric properties are determined by the polarization state of the grain. A piezoelectric coefficient of 65 pm/V was attained after poling in a grain with a polar axis very close to the normal direction. The piezoelectric coefficient and the remanent polarization were larger for a-b axes oriented than for c-axis-oriented films. (c) 2007 Elsevier B.V All rights reserved.
dc.languageeng
dc.publisherElsevier B.V. Sa
dc.relationJournal of Materials Processing Technology
dc.relation3.647
dc.relation1,695
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectferroelectricity
dc.subjectthin-film
dc.subjectpiezoelectricity
dc.titleFerroelectric and piezoelectric properties of bismuth layered thin films grown on (100) Pt electrodes
dc.typeArtículos de revistas


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