dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorBangor Univ
dc.contributorUniversidade de São Paulo (USP)
dc.date.accessioned2014-05-20T13:23:00Z
dc.date.available2014-05-20T13:23:00Z
dc.date.created2014-05-20T13:23:00Z
dc.date.issued2012-10-01
dc.identifierOrganic Electronics. Amsterdam: Elsevier B.V., v. 13, n. 10, p. 2109-2117, 2012.
dc.identifier1566-1199
dc.identifierhttp://hdl.handle.net/11449/6850
dc.identifier10.1016/j.orgel.2012.05.058
dc.identifierWOS:000309591200045
dc.identifier7607651111619269
dc.identifier0000-0001-8001-301X
dc.description.abstractThe admittance spectra and current-voltage (I-V) characteristics are reported of metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) capacitors employing cross-linked poly(amide-imide) (c-PAI) as the insulator and poly(3-hexylthiophene) (P3HT) as the active semiconductor. The capacitance of the MIM devices are constant in the frequency range from 10 Hz to 100 kHz, with tan delta values as low as 7 x 10(-3) over most of the range. Except at the lowest voltages, the I-V characteristics are well-described by the Schottky equation for thermal emission of electrons from the electrodes into the insulator. The admittance spectra of the MIS devices displayed a classic Maxwell-Wagner frequency response from which the transverse bulk hole mobility was estimated to be similar to 2 x 10(-5) cm(2) V(-1)s(-1) or similar to 5 x 10(-8) cm(2) V(-1)s(-1) depending on whether or not the surface of the insulator had been treated with hexamethyldisilazane (HMDS) prior to deposition of the P3HT. From the maximum loss observed in admittance-voltage plots, the interface trap density was estimated to be similar to 5 x 10(10) cm(-2) eV(-1) or similar to 9 x 10(10) cm(-2) eV(-1) again depending whether or not the insulator was treated with HMDS. We conclude, therefore, that HMDS plays a useful role in promoting order in the P3HT film as well as reducing the density of interface trap states. Although interposing the P3HT layer between the insulator and the gold electrode degrades the insulating properties of the c-PAI, nevertheless, they remain sufficiently good for use in organic electronic devices. (c) 2012 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherElsevier B.V.
dc.relationOrganic Electronics
dc.relation3.680
dc.relation1,085
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectPoly(amide-imide)
dc.subjectGate dielectrics
dc.subjectMetal-insulator-semiconductor devices
dc.subjectImpedance spectroscopy
dc.titleElectrical characterization of poly(amide-imide) for application in organic field effect devices
dc.typeArtículos de revistas


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