Analysis of hot carrier degradation impact on small signal model parameters in nanometric n-MOSFET

dc.contributorREYDEZEL TORRES TORRES
dc.creatorDANIEL GARCIA GARCIA
dc.date2015-01
dc.date.accessioned2018-11-19T14:25:12Z
dc.date.available2018-11-19T14:25:12Z
dc.identifierhttp://inaoe.repositorioinstitucional.mx/jspui/handle/1009/87
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/2258236
dc.descriptionThe reliability of sub-100nm MOSFETs due to Hot Carrier Stress becomes a critical topic as the channel length of the transistors shrinks at different rate as the power sources do. Much research has been made in this area from a DC point of view but only a few have analyzed the effect of this degradation in the parameters that constitute the small-signal model. An analysis of the level of hot carrier (HC) degradation caused up to 20 GHz is introduced. The degradation process is done through the application of controlled DC currents at well defines periods of time. The recorded S-parameters before and after DC degradation allows the observation of the corresponding changes in the transmission and reflection features, as well as in the intrinsic channel resistance and the transconductance.
dc.formatapplication/pdf
dc.languageeng
dc.publisherInstituto Nacional de Astrofísica, Óptica y Electrónica
dc.relationcitation:Garcia-Garcia D.
dc.rightsinfo:eu-repo/semantics/openAccess
dc.rightshttp://creativecommons.org/licenses/by-nc-nd/4.0
dc.subjectinfo:eu-repo/classification/Portadora/Carrier relaxation time
dc.subjectinfo:eu-repo/classification/Semiconductores/Degenerate semiconductors
dc.subjectinfo:eu-repo/classification/Analizadores/Differential analysers
dc.subjectinfo:eu-repo/classification/MOSFET/MOSFET
dc.subjectinfo:eu-repo/classification/cti/1
dc.subjectinfo:eu-repo/classification/cti/22
dc.subjectinfo:eu-repo/classification/cti/2203
dc.titleAnalysis of hot carrier degradation impact on small signal model parameters in nanometric n-MOSFET
dc.typeTesis
dc.audiencegeneralPublic


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