Modeling electronic transport mechanisms in metal-manganite memristive interfaces

dc.creatorGomez Marlasca, F.
dc.creatorGhenzi, Néstor
dc.creatorLeyva, Adelma Graciela
dc.creatorAlbornoz, Cecilia Andrea
dc.creatorStoliar, Pablo Alberto
dc.creatorRubi, Diego
dc.creatorLevy, Pablo Eduardo
dc.date.accessioned2017-09-13T14:34:56Z
dc.date.accessioned2018-11-06T15:03:36Z
dc.date.available2017-09-13T14:34:56Z
dc.date.available2018-11-06T15:03:36Z
dc.date.created2017-09-13T14:34:56Z
dc.date.issued2013-04
dc.identifierGomez Marlasca, F.; Ghenzi, Néstor; Leyva, Adelma Graciela; Albornoz, Cecilia Andrea; Stoliar, Pablo Alberto; et al.; Modeling electronic transport mechanisms in metal-manganite memristive interfaces; American Institute of Physics; Journal of Applied Physics; 113; 14; 4-2013; 1-5; 114510
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11336/24116
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1893343
dc.description.abstractWe studied La0.325Pr0.300Ca0.375MnO3-Ag memristive interfaces. We present a pulsing/measuring protocol capable of registering both quasi-static i-v data and non-volatile remnant resistance. This protocol allowed distinguishing two different electronic transport mechanisms coexisting at the memristive interface, namely space charge limited current and thermionic emission limited current. We introduce a 2-element electric model that accounts for the obtained results and allows predicting the quasi-static i-v relation of the interface by means of a simple function of both the applied voltage and the remnant resistance value. Each element of the electric model is associated to one of the electronic transport mechanisms found. This electric model could result useful for developing time-domain simulation models of metal-manganite memristive interfaces.
dc.languageeng
dc.publisherAmerican Institute of Physics
dc.relationinfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.4800887
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4800887
dc.rightshttps://creativecommons.org/licenses/by/2.5/ar/
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectResistive switching
dc.subjectManganite
dc.subjectMemories
dc.subjectAlgorithm
dc.titleModeling electronic transport mechanisms in metal-manganite memristive interfaces
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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