dc.creatorMalagù, Cesare
dc.creatorGiberti, Alessio
dc.creatorMorandi, Sara
dc.creatorAldao, Celso Manuel
dc.date.accessioned2016-12-27T17:53:30Z
dc.date.accessioned2018-11-06T14:32:31Z
dc.date.available2016-12-27T17:53:30Z
dc.date.available2018-11-06T14:32:31Z
dc.date.created2016-12-27T17:53:30Z
dc.date.issued2011-11-07
dc.identifierMalagù, Cesare; Giberti, Alessio; Morandi, Sara; Aldao, Celso Manuel; Electrical and spectroscopic analysis in nanostructured SnO2: "long-term" resistance drift is due to in-diffusion; American Institute Of Physics; Journal Of Applied Physics; 110; 9; 7-11-2011; 519-527
dc.identifier0021-8979
dc.identifierhttp://hdl.handle.net/11336/10312
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1887502
dc.description.abstractA model for conductance in n-type non-degenerate semiconductors is proposed and applied to polycrystalline SnO2 used as a gas sensor. Particular attention is devoted to the fundamental mechanism of Schottky barrier formation due to surface states in nanostructured grains. Electrical and absorption infra-red spectroscopic analysis constitutes strong evidence for oxygen diffusion into the tin oxide grains. The model is then extended to include oxygen in- and out-diffusion. Thus, it is possible to explain the “long-term” resistance drift in oxygen for fully depleted grained samples in terms of tunneling through the double barrier.
dc.languageeng
dc.publisherAmerican Institute Of Physics
dc.relationinfo:eu-repo/semantics/altIdentifier/url/http://aip.scitation.org/doi/10.1063/1.3658870
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.3658870
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectNANOESTRUCTURE TIN OXIDE
dc.subjectMETAL OXIDE SENSORS
dc.subjectVACANCIES
dc.subjectSURFACE STATES
dc.subjectTUNNELING
dc.subjectCONDUCTION BANDS
dc.subjectFOURIER TRANSFORM INFRARED SPECTROSCOPY
dc.titleElectrical and spectroscopic analysis in nanostructured SnO2: "long-term" resistance drift is due to in-diffusion
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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