dc.creatorAragon, Ricardo
dc.creatorLombardi, Rina
dc.date.accessioned2017-12-11T16:55:24Z
dc.date.available2017-12-11T16:55:24Z
dc.date.created2017-12-11T16:55:24Z
dc.date.issued2014-10
dc.identifierAragon, Ricardo; Lombardi, Rina; Field Effect Devices Sensitive to CO at Room Temperature; International Frequency Sensor Association; Sensors and Transducers; 180; 10; 10-2014; 80-84
dc.identifier2306-8515
dc.identifierhttp://hdl.handle.net/11336/30150
dc.identifier1726-5479
dc.identifierCONICET Digital
dc.identifierCONICET
dc.description.abstract[5,10,15-Tris(2,6-dichlorophenyl)corrolate]cobalt(III) was used to chemisorb CO selectively, on the gap-gate of MOS capacitors and the state of charge monitored by voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to CO concentration in air. Negative chemically induced charges at room temperature induce positive responses above and negative shifts below the threshold voltage, conforming to acceptor behavior, and the dynamic range (125 ppm) is limited by the silicon doping concentration. The linear proportionality between CO concentration and surface charge (6.46 [ppm.m2.µC-1]) corresponds to the low concentration limit of the Langmuir isotherm. Sluggish CO desorption can be compensated by photo stimulation at 395 nm.
dc.languageeng
dc.publisherInternational Frequency Sensor Association
dc.relationinfo:eu-repo/semantics/altIdentifier/url/http://www.sensorsportal.com/HTML/DIGEST/P_2442.htm
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectCo
dc.subjectFet Sensor
dc.subjectRoom Temperature
dc.subjectCo-Corrole
dc.subjectPhotodesorption
dc.titleField Effect Devices Sensitive to CO at Room Temperature
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:ar-repo/semantics/artículo
dc.typeinfo:eu-repo/semantics/publishedVersion


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