Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices

dc.creatorFujiwara, Kohei
dc.creatorNemoto, Takumi
dc.creatorRozenberg, Marcelo Javier
dc.creatorNakamura, Yoshinobu
dc.creatorTakagi, Hidenori
dc.date.accessioned2018-10-03T18:11:38Z
dc.date.accessioned2018-11-06T13:55:58Z
dc.date.available2018-10-03T18:11:38Z
dc.date.available2018-11-06T13:55:58Z
dc.date.created2018-10-03T18:11:38Z
dc.date.issued2008-12
dc.identifierFujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo Javier; Nakamura, Yoshinobu; Takagi, Hidenori; Resistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices; Japan Society Applied Physics; Japanese Journal Of Applied Physics; 47; 8 PART 1; 12-2008; 6266-6271
dc.identifier0021-4922
dc.identifierhttp://hdl.handle.net/11336/61544
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1880776
dc.description.abstractThe resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect. © 2008 The Japan Society of Applied Physics.
dc.languageeng
dc.publisherJapan Society Applied Physics
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1143/JJAP.47.6266
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectCUO
dc.subjectDIELECTRIC BREAKDOWN
dc.subjectMEMORY EFFECT
dc.subjectREDUCTION-OXIDATION
dc.subjectRERAM
dc.subjectRESISTANCE SWITCHING
dc.titleResistance switching and formation of a conductive bridge in metal/binary oxide/metal structure for memory devices
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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