Tuning the resistive switching properties of TiO2-x films

dc.creatorGhenzi, Néstor
dc.creatorRozenberg, M.J.
dc.creatorLlopis, R.
dc.creatorLevy, Pablo Eduardo
dc.creatorHueso, Luis E.
dc.creatorStoliar, Pablo Alberto
dc.date.accessioned2018-03-09T20:25:46Z
dc.date.accessioned2018-11-06T12:40:31Z
dc.date.available2018-03-09T20:25:46Z
dc.date.available2018-11-06T12:40:31Z
dc.date.created2018-03-09T20:25:46Z
dc.date.issued2015-03
dc.identifierGhenzi, Néstor; Rozenberg, M.J.; Llopis, R.; Levy, Pablo Eduardo; Hueso, Luis E.; et al.; Tuning the resistive switching properties of TiO2-x films; American Institute of Physics; Applied Physics Letters; 106; 12; 3-2015; 1-4
dc.identifier0003-6951
dc.identifierhttp://hdl.handle.net/11336/38478
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1868975
dc.description.abstractWe study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state.
dc.languageeng
dc.publisherAmerican Institute of Physics
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1063/1.4916516
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://aip.scitation.org/doi/10.1063/1.4916516
dc.rightshttps://creativecommons.org/licenses/by/2.5/ar/
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectMemory devices
dc.subjectRRAM
dc.subjectMemristors
dc.subjectOxides
dc.titleTuning the resistive switching properties of TiO2-x films
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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