Diffusion of Sn in different purity α-Ti

dc.creatorPerez, Rodolfo Ariel
dc.creatorDyment, Fanny
dc.creatorBehar, Andrea Marcela
dc.date.accessioned2018-04-19T18:54:34Z
dc.date.accessioned2018-11-06T12:25:49Z
dc.date.available2018-04-19T18:54:34Z
dc.date.available2018-11-06T12:25:49Z
dc.date.created2018-04-19T18:54:34Z
dc.date.issued2003-05
dc.identifierPerez, Rodolfo Ariel; Dyment, Fanny; Behar, Andrea Marcela; Diffusion of Sn in different purity α-Ti; Elsevier Science; Materials Letters; 57; 18; 5-2003; 2670-2674
dc.identifier0167-577X
dc.identifierhttp://hdl.handle.net/11336/42734
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1866496
dc.description.abstractThe diffusion of Sn in the hcp (α) phase of high purity (99.99%) and pure (99.9%) Ti was studied at different temperatures from 873 up to 1100 K. The Rutherford Backscattering Spectrometry (RBS) technique was used to obtain the penetration profiles. The evolution of the diffusion coefficient, D, as a function of temperature follows the prediction of the Arrhenius law. No significant difference between both kinds of Ti samples was observed. Normal diffusion parameters, Q and D0, close to the self-diffusion ones were obtained.
dc.languageeng
dc.publisherElsevier Science
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/S0167-577X(02)01353-8
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0167577X02013538
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectDIFFUSION
dc.subjectENHANCED DIFFUSION
dc.subjectHCP METALS
dc.subjectRBS
dc.subjectSN
dc.subjectTI
dc.subjectULTRA-FAST DIFFUSION
dc.titleDiffusion of Sn in different purity α-Ti
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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