White light from annealed porous silicon: Broadband emission from violet to the near infrared

dc.creatorMarín Ramírez, Oscar Alonso
dc.creatorGennaro, Ana Maria
dc.creatorTirado, Monica Cecilia
dc.creatorKoropecki, Roberto Roman
dc.creatorComedi, David Mario
dc.date.accessioned2017-12-11T22:15:35Z
dc.date.accessioned2018-11-06T12:10:03Z
dc.date.available2017-12-11T22:15:35Z
dc.date.available2018-11-06T12:10:03Z
dc.date.created2017-12-11T22:15:35Z
dc.date.issued2015-03
dc.identifierMarín Ramírez, Oscar Alonso; Gennaro, Ana Maria; Tirado, Monica Cecilia; Koropecki, Roberto Roman; Comedi, David Mario; White light from annealed porous silicon: Broadband emission from violet to the near infrared; Elsevier Science; Materials Letters; 150; 3-2015; 55-58
dc.identifier0167-577X
dc.identifierhttp://hdl.handle.net/11336/30225
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1863857
dc.description.abstractWe report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad emission from ultraviolet to near infrared. Annealed PS samples were studied by photoluminescence, FTIR and EPR spectroscopies. The PL spectra were found to include three main components centered at the violet, green and infrared. The FTIR experiments suggest the formation of a system composed by silicon nanocrystals embedded in a nonstoichiometric silicon oxide matrix (nc-Si/SiOx). The EPR measurements reveal the existence of the well-know Pb0 (g~2.007) and Pb1 (g~2.004) centres, and of a signal at g~1.9997. The combined PL, FTIR and EPR results suggest that violet and green emissions come from oxygen-excess defects in SiOx while the infrared emission is related to defects located at Si/SiOx interfaces.
dc.languageeng
dc.publisherElsevier Science
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.matlet.2015.03.003
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0167577X15003572
dc.rightshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectWhite light emission
dc.subjectPhotoluminescence
dc.subjectPorous silicon
dc.subjectSilicon dioxide
dc.titleWhite light from annealed porous silicon: Broadband emission from violet to the near infrared
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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