Artículos de revistas
Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness
Fecha
2015-03Registro en:
Rubi, Diego; Kalstein, Ariel; Roman Acevedo, Wilson Stibens; Ghenzi, Néstor; Quinteros, Cynthia Paula; et al.; Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness; Elsevier Science Sa; Thin Solid Films; 583; 1; 3-2015; 76-80
0040-6090
CONICET Digital
CONICET
Autor
Rubi, Diego
Kalstein, Ariel
Roman Acevedo, Wilson Stibens
Ghenzi, Néstor
Quinteros, Cynthia Paula
Mangano, E.
Granell, Pablo Nicolás
Golmar, Federico
Marlasca, F. G.
Suarez, Sergio Gabriel
Bernardi, Guillermo Carlos
Albornoz, C.
Leyva de Guglielmino, Ana Gabriela
Levy, Pablo Eduardo
Resumen
We report on the fabrication and characterization of La2/3Ca1/3MnO3 manganite-based memristive devices. Polycrystalline manganite thin films were grown by Pulsed Laser Deposition, while metallic electrodes were deposited by sputtering. We show that, depending on the polarity of the initial electroforming, both clockwise and anti-clockwise current-voltage curves can be obtained. We attribute this behavior to the coexistence of different resistive switchingmechanisms.We finally evaluate the electrical behavior of our devices after irradiation with high energy oxygen ions. We find no significant difference in the dielectric breakdown voltages between irradiated and non-irradiated devices, indicating that they may present radiation hardness and could be therefore appropriate for space or nuclear applications.