Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs

dc.creatorPalumbo, Félix Roberto Mario
dc.creatorShekhter, P.
dc.creatorEizenberg, M.
dc.date.accessioned2018-01-09T21:50:21Z
dc.date.accessioned2018-11-06T11:57:33Z
dc.date.available2018-01-09T21:50:21Z
dc.date.available2018-11-06T11:57:33Z
dc.date.created2018-01-09T21:50:21Z
dc.date.issued2014-01
dc.identifierEizenberg, M.; Shekhter, P.; Palumbo, Félix Roberto Mario; Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs; Elsevier; Solid-state Electronics; 93; 1-2014; 56-60
dc.identifier0038-1101
dc.identifierhttp://hdl.handle.net/11336/32762
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1861518
dc.description.abstractIn this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states.
dc.languageeng
dc.publisherElsevier
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.sse.2013.12.011
dc.relationinfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S0038110113003699
dc.rightshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectInGaAs
dc.subjectResistive switching
dc.subjectInterface states
dc.titleInfluence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


Este ítem pertenece a la siguiente institución