Negative differential resistance in porous silicon devices at room temperature

dc.creatorMarín Ramírez, Oscar Alonso
dc.creatorToranzos, Victor Jose
dc.creatorUrteaga, Raul
dc.creatorComedi, David Mario
dc.creatorKoropecki, Roberto Roman
dc.date.accessioned2017-10-11T21:18:05Z
dc.date.accessioned2018-11-06T11:28:09Z
dc.date.available2017-10-11T21:18:05Z
dc.date.available2018-11-06T11:28:09Z
dc.date.created2017-10-11T21:18:05Z
dc.date.issued2014-12
dc.identifierMarín Ramírez, Oscar Alonso; Toranzos, Victor Jose; Urteaga, Raul; Comedi, David Mario; Koropecki, Roberto Roman; Negative differential resistance in porous silicon devices at room temperature; Elsevier; Superlattices And Microstructures; 79; 12-2014; 45-53
dc.identifier0749-6036
dc.identifierhttp://hdl.handle.net/11336/26464
dc.identifierCONICET Digital
dc.identifierCONICET
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1852604
dc.description.abstractWe report a voltage controlled negative differential resistance (NDR) effect at room temperature in two types of devices based on porous silicon (PS): thermally oxidized porous silicon multilayer with Ag electrodes in a sandwich configuration (Ag/c-Si/PS/ Ag) and porous silicon single layer with Al electrodes in a coplanar configuration (Al/PS/Al). The NDR effect was observed in current– voltage characteristics and showed telegraphic noise. The NDR effects showed a strong dependence with temperature and with the surrounding atmospheric air pressure. The NDR occurrence was attributed to the blocking of conduction channels due to carrier trapping phenomena. We also experimentally demonstrate porous silicon devices exploiting the NDR effect, with potential applications as volatile memory devices.
dc.languageeng
dc.publisherElsevier
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.spmi.2014.12.019
dc.relationinfo:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S074960361400487X
dc.rightshttps://creativecommons.org/licenses/by-nc-nd/2.5/ar/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.subjectNegative Differential Resistance
dc.subjectPorous Silicon
dc.subjectCarrier Trapping
dc.subjectVolatile Memory
dc.titleNegative differential resistance in porous silicon devices at room temperature
dc.typeArtículos de revistas
dc.typeArtículos de revistas
dc.typeArtículos de revistas


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