dc.creatorMendes, A. C.
dc.creatorMaia, L. J. Q.
dc.creatorMessaddeq, S. H.
dc.creatorMessaddeq, Y.
dc.creatorRibeiro, S. J. L.
dc.creatorLi, Maximo Siu
dc.date.accessioned2016-04-08T19:45:00Z
dc.date.accessioned2018-07-04T16:53:47Z
dc.date.available2016-04-08T19:45:00Z
dc.date.available2018-07-04T16:53:47Z
dc.date.created2016-04-08T19:45:00Z
dc.date.issued2011-12
dc.identifierPhysica B, Amsterdam : Elsevier BV, v. 406, n. 23, p. 4381-4386, Dec. 2011
dc.identifier0921-4526
dc.identifierhttp://www.producao.usp.br/handle/BDPI/50034
dc.identifier10.1016/j.physb.2011.08.091
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1641842
dc.description.abstractOxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS2+Ga2O3 (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics.
dc.languageeng
dc.publisherElsevier BV
dc.publisherAmsterdam
dc.relationPhysica B: Condensed Matter
dc.rightsCopyright Elsevier B.V.
dc.rightsrestrictedAccess
dc.subjectOxysulfide
dc.subjectOptical bandgap
dc.subjectPhotoexpansion
dc.subjectPhotobleaching
dc.subjectThin films
dc.titlePhotoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system
dc.typeArtículos de revistas


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