Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices

dc.creatorPusep, Yuri A.
dc.creatorGold, A.
dc.creatorMamani, N. C.
dc.creatorGodoy, M. P. F.
dc.creatorGobato, Y. Galvão
dc.creatorLaPierre, R. R.
dc.date.accessioned2016-01-21T17:07:49Z
dc.date.accessioned2018-07-04T16:53:38Z
dc.date.available2016-01-21T17:07:49Z
dc.date.available2018-07-04T16:53:38Z
dc.date.created2016-01-21T17:07:49Z
dc.date.issued2011-10
dc.identifierJournal of Applied Physics, College Park : American Institute of Physics - AIP, v. 110, n. 7, p. 073706-1-073706-6, Oct. 2011
dc.identifier0021-8979
dc.identifierhttp://www.producao.usp.br/handle/BDPI/49534
dc.identifier10.1063/1.3646365
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1641815
dc.description.abstractThe combination of photoluminescence and magneto-transport measurements is used to study the single-particle relaxation time and the transport scattering time in short-period InGaAs/InP superlattices. Both the single-particle relaxation times of the electrons and of the holes were obtained in the same samples and were shown to be determined by the remote-impurity scattering. The transport scattering time for electrons was found to be dominated by the interface-roughness scattering with lateral length Λ=10 nmΛ=10 nm and height Δ = 0.13 nm. We also discuss the importance of multiple-scattering effects for small well widths and of alloy scattering for large well widths.
dc.languageeng
dc.publisherAmerican Institute of Physics - AIP
dc.publisherCollege Park
dc.relationJournal of Applied Physics
dc.rightsCopyright American Institute of Physics
dc.rightsrestrictedAccess
dc.subjectElectron scattering
dc.subjectRelaxation times
dc.subjectQuantum wells
dc.subjectMetal insulator transitions
dc.subjectIII-V semiconductors
dc.titleElectron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices
dc.typeArtículos de revistas


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