Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures

dc.creatorMazur, Yu. I.
dc.creatorDorogan, V. G.
dc.creatorMarega Júnior, Euclydes
dc.creatorGuzun, D.
dc.creatorWare, M. E.
dc.creatorZhuchenko, Z. Ya.
dc.creatorTarasov, G. G.
dc.creatorLienau, C.
dc.creatorSalamo, G. J.
dc.date.accessioned2014-06-03T19:33:40Z
dc.date.accessioned2018-07-04T16:46:01Z
dc.date.available2014-06-03T19:33:40Z
dc.date.available2018-07-04T16:46:01Z
dc.date.created2014-06-03T19:33:40Z
dc.date.issued2013-01
dc.identifierJournal of Applied Physics, College Park : American Institute of Physics - AIP, v. 113, n. 3, p. 034309-1-034309-8, Jan. 2013
dc.identifier0021-8979
dc.identifierhttp://www.producao.usp.br/handle/BDPI/45241
dc.identifier10.1063/1.4779686
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1640082
dc.description.abstractThe thermally induced redistribution of carriers between quantum well (QW) and quantum dot (QD) layers in a hybrid dot-well system composed of InAs QDs and an InGaAs QW is studied by means of photoluminescence (PL) spectroscopy. This redistribution significantly affects the QD and QW PL intensities depending both on the dot-well barrier thickness and height. For comparatively thin barriers, the interplay between tunnel and thermal carrier fluxes becomes crucial, governing the exciton dynamics in a tunnel injection dot-well structure at elevated temperatures. For a sufficiently thick spacer, it is shown that exciton localization within the QW, apparently induced by QD strain fields, has a profound influence on the transfer dynamics at low temperatures.
dc.languageeng
dc.publisherAmerican Institute of Physics - AIP
dc.publisherCollege Park
dc.relationJournal of Applied Physics
dc.rightsCopyright American Institute of Physics
dc.rightsrestrictedAccess
dc.subjectQuantum dots
dc.subjectQuantum wells
dc.subjectPhotoluminescence
dc.subjectExcitons
dc.subjectIII-IV semiconductors
dc.titleEffect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures
dc.typeArtículos de revistas


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