dc.creatorGuzun, D.
dc.creatorMazur, Yu. I.
dc.creatorDorogan, V. G.
dc.creatorWare, M. E.
dc.creatorMarega Júnior, Euclydes
dc.creatorTarasov, G. G.
dc.creatorLienau, C.
dc.creatorSalamo, G. J.
dc.date.accessioned2014-06-03T18:56:43Z
dc.date.accessioned2018-07-04T16:45:47Z
dc.date.available2014-06-03T18:56:43Z
dc.date.available2018-07-04T16:45:47Z
dc.date.created2014-06-03T18:56:43Z
dc.date.issued2013-04
dc.identifierJournal of Applied Physics, College Park : American Institute of Physics - AIP, v. 113, n. 15, p. 154304-1-154304-5, Apr. 2013
dc.identifier0021-8979
dc.identifierhttp://www.producao.usp.br/handle/BDPI/45238
dc.identifier10.1063/1.4801891
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1640030
dc.description.abstractExcitonic dynamics in a hybrid dot-well system composed of InAs quantum dots (QDs) and an InGaAs quantum well (QW) is studied by means of femtosecond pump-probe reflection and continuous wave (cw) photoluminescence (PL) spectroscopy. The system is engineered to bring the QW ground exciton state into resonance with the third QD excited state. The resonant tunneling rate is varied by changing the effective barrier thickness between the QD and QW layers. This strongly affects the exciton dynamics in these hybrid structures as compared to isolated QW or QD systems. Optically measured decay times of the coupled system demonstrate dramatically different response to temperature change depending on the strength of the resonant tunneling or coupling strength. This reflects a competition between purely quantum mechanical and thermodynamical processes.
dc.languageeng
dc.publisherAmerican Institute of Physics - AIP
dc.publisherCollege Park
dc.relationJournal of Applied Physics
dc.rightsCopyright AIP Publishing LLC
dc.rightsrestrictedAccess
dc.subjectQuantum wells
dc.subjectQuantum dots
dc.subjectExcitons
dc.subjectTunneling
dc.subjectPhotoluminescence
dc.titleEffect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures
dc.typeArtículos de revistas


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