Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires

dc.creatorGuimarães, Francisco Eduardo Gontijo
dc.creatorCaface, R. A.
dc.creatorArakaki, Haroldo
dc.creatorSouza, Carlos Alberto de
dc.creatorPusep, Yuri A.
dc.date.accessioned2014-06-02T19:29:42Z
dc.date.accessioned2018-07-04T16:45:46Z
dc.date.available2014-06-02T19:29:42Z
dc.date.available2018-07-04T16:45:46Z
dc.date.created2014-06-02T19:29:42Z
dc.date.issued2013-07
dc.identifierApplied Physics Letters, AIP, College Park,v. 103, n. 3, p. 033121-1-033121-3, July 2013
dc.identifier0003-6951
dc.identifierhttp://www.producao.usp.br/handle/BDPI/45210
dc.identifier10.1063/1.4816288
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1640029
dc.description.abstractTime-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructured GaAs/AlGaAs/GaAs core/inner shell/outer shell nanowires. It was found that impurity random potential results in a red shift of the recombination time maximum with respect to the photoluminescence peak energy.
dc.languageeng
dc.publisherAmerican Institute of Physics - AIP
dc.publisherCollege Park
dc.relationApplied Physics Letters
dc.rightsrestrictedAccess
dc.titleDynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires
dc.typeArtículos de revistas


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