dc.creatorCabral, M. F.
dc.creatorCalegaro, Marcelo Luiz
dc.creatorMachado, Sergio Antonio Spinola
dc.date.accessioned2013-11-06T18:33:54Z
dc.date.accessioned2018-07-04T16:17:54Z
dc.date.available2013-11-06T18:33:54Z
dc.date.available2018-07-04T16:17:54Z
dc.date.created2013-11-06T18:33:54Z
dc.date.issued2012
dc.identifierRSC ADVANCES, CAMBRIDGE, v. 2, n. 6, supl. 2, Part 1-2, pp. 2498-2503, 38899, 2012
dc.identifier2046-2069
dc.identifierhttp://www.producao.usp.br/handle/BDPI/42461
dc.identifier10.1039/c2ra00847e
dc.identifierhttp://dx.doi.org/10.1039/c2ra00847e
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1634038
dc.description.abstractAn electrochemical quartz crystal microbalance Au electrode modified with a Se thin film was used to investigate the electrochemical behavior of lead ad-atoms using underpotential deposition (UPD) conditions. A specific quasi-reversible process was observed during the reduction of Pb2+ on Se thin films in perchloric acid media. The charge density of Pb ad-atoms on Se thin film (46.86 mu C cm(-2)) suggests a recovery of 0.1 monolayers, which is in good agreement with EQCM data. The Se thin film can be successfully alloyed with Pb atoms that are deposited by chronoamperometry using time intervals large enough to allow for diffusion toward the inner Se phase. Linear sweep voltammetry combined with EQCM in perchloric acid was used to characterize the amount of Pb absorbed in the Se thin film. These findings offer a new strategy for alloy formation in semiconductor films using UPD as an effective tool to quantify the exact amount of the incorporated metal.
dc.languageeng
dc.publisherROYAL SOC CHEMISTRY
dc.publisherCAMBRIDGE
dc.relationRSC ADVANCES
dc.rightsCopyright ROYAL SOC CHEMISTRY
dc.rightsclosedAccess
dc.titleNanogravimetric study of lead underpotential deposition on selenium thin films as a semiconductor alloy formation procedure
dc.typeArtículos de revistas


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