dc.creatorRehder, Gustavo
dc.creatorTrang Vo
dc.creatorFerrari, Philippe
dc.date.accessioned2013-09-24T13:45:16Z
dc.date.accessioned2018-07-04T16:15:09Z
dc.date.available2013-09-24T13:45:16Z
dc.date.available2018-07-04T16:15:09Z
dc.date.created2013-09-24T13:45:16Z
dc.date.issued2012
dc.identifierMICROELECTRONIC ENGINEERING, AMSTERDAM, v. 90, pp. 19-22, FEB, 2012
dc.identifier0167-9317
dc.identifierhttp://www.producao.usp.br/handle/BDPI/33635
dc.identifier10.1016/j.mee.2011.03.018
dc.identifierhttp://dx.doi.org/10.1016/j.mee.2011.03.018
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1633446
dc.description.abstractWe propose a slow-wave MEMS phase shifter that can be fabricated using the CMOS back-end and an additional maskless post-process etch. The tunable phase shifter concept is formed by a conventional slow-wave transmission line. The metallic ribbons that form the patterned floating shield of this type of structure are released to allow motion when a control voltage is applied, which changes the characteristic impedance and the phase velocity. For this device a quality factor greater than 40 can be maintained, resulting in a figure of merit on the order of 0.7 dB/360 degrees and a total area smaller than 0.14 mm(2) for a 60-GHz working frequency. (C) 2011 Elsevier B.V. All rights reserved.
dc.languageeng
dc.publisherELSEVIER SCIENCE BV
dc.publisherAMSTERDAM
dc.relationMICROELECTRONIC ENGINEERING
dc.rightsCopyright ELSEVIER SCIENCE BV
dc.rightsclosedAccess
dc.subjectCMOS MEMS
dc.subjectMILLIMETER WAVE
dc.subjectPHASE SHIFTER
dc.subjectSLOW-WAVE
dc.titleDevelopment of a slow-wave MEMS phase shifter on CMOS technology for millimeter wave frequencies
dc.typeArtículos de revistas


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